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HWL26NC ! !
March 2004 V2
Features
* Low Cost GaAs Power FET * Class A or Class AB Operation * 17 dB Typical Gain at 2.4 GHz * 5V to 10V Operation 376
Outline Dimensions
451.5
1
Description
The HWL26NC is a medium power GaAs FET designed for various L-band & S-band applications.
226
2
4
226.0
76
Absolute Maximum Ratings
VDS VGS ID IG TCH TSTG PT
*
3
Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Power Dissipation
+15V -5V IDSS 1 mA 175C -65 to +175C 1.7 W
0 0.0 75.5 275 440 524
Units: m Thickness: 50 5 Chip size 50 Bond Pad 1, 3 (Source): 100 x 100 Bond Pad 2 (Gate): 100 x 100 Bond Pad 4 (Drain): 100 x 100
* mounted on an infinite heat sink
Electrical Specifications (TA=25C) f = 2.4 GHz for all RF Tests
Symbol IDSS VP Parameters & Conditions Saturated Current at VDS=3V, VGS=0V Pinch-off Voltage at VDS=3V, ID=10 mA Transconductance at VDS=3V, ID=100 mA Power Output at Test Points VDS=10V, ID=0.5 IDSS Gain at 1dB Compression Point VDS=10V, ID=0.5 IDSS Power-Added Efficiency (POUT = P1dB) VDS=10V, ID=0.5 IDSS Units mA V mS dBm dB % Min. 150 -3.5 25 15 30 Typ. 200 -2.0 120 26 16 40 Max. 280 -1.5 -
gm
P1dB G1dB PAE
Hexawave Inc.
2 Prosperity Road II, Science-Based Industrial Park, Hsinchu, Taiwan. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw All specifications are subject to change without notice.
HWL26NC ! !
March 2004 V2
Small Signal Common Source Scattering Parameters
S-MAGN AND ANGLES VDS=10V, IDS=0.5IDSS (GHz)
0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90 4.00
lS11l
0.937 0.913 0.914 0.879 0.876 0.877 0.841 0.836 0.829 0.808 0.801 0.789 0.774 0.764 0.749 0.742 0.735 0.730 0.719 0.712 0.704 0.702 0.699 0.691 0.685 0.682 0.677 0.673 0.669 0.666 0.660 0.659 0.655 0.654 0.654 0.649
ANG
-31.59 -36.66 -43.76 -48.51 -52.96 -58.75 -62.64 -67.67 -72.48 -76.57 -80.99 -84.77 -88.31 -92.13 -95.65 -98.77 -102.05 -105.18 -108.16 -111.27 -113.87 -116.48 -119.17 -121.69 -124.07 -126.73 -128.66 -131.03 -133.03 -135.18 -136.94 -138.99 -141.20 -142.72 -144.89 -146.36
lS21l
7.266 7.019 6.853 6.665 6.500 6.372 6.141 5.941 5.765 5.593 5.405 5.260 5.086 4.922 4.763 4.627 4.501 4.379 4.224 4.112 3.994 3.885 3.793 3.698 3.594 3.509 3.420 3.339 3.269 3.189 3.118 3.052 2.976 2.925 2.864 2.805
ANG
154.62 150.87 147.84 143.96 140.47 137.32 133.92 130.86 128.22 125.43 122.53 120.03 117.70 115.31 112.97 110.70 108.73 106.93 104.69 102.73 100.83 99.36 97.68 96.00 94.13 92.49 90.96 89.48 87.98 86.58 85.05 83.73 82.18 80.79 79.38 78.25
lS12l
0.009 0.010 0.012 0.013 0.016 0.016 0.018 0.018 0.019 0.020 0.020 0.022 0.022 0.023 0.023 0.024 0.024 0.025 0.025 0.025 0.026 0.025 0.026 0.026 0.027 0.027 0.027 0.028 0.027 0.028 0.028 0.028 0.029 0.030 0.029 0.029
ANG
67.60 71.96 70.20 65.51 62.61 60.98 60.19 57.63 56.57 56.60 53.30 53.04 53.41 51.56 50.83 50.81 49.19 49.32 48.70 47.52 48.07 48.93 47.71 46.92 48.15 47.53 46.75 47.21 46.44 47.13 47.88 47.91 48.50 49.20 48.35 49.49
lS22l
0.621 0.627 0.621 0.631 0.618 0.607 0.613 0.604 0.602 0.604 0.596 0.597 0.599 0.595 0.593 0.590 0.589 0.592 0.583 0.581 0.576 0.576 0.578 0.576 0.568 0.566 0.566 0.566 0.564 0.558 0.557 0.559 0.551 0.556 0.551 0.548
ANG
-5.05 -6.70 -6.50 -8.01 -10.42 -11.30 -12.88 -13.41 -14.06 -14.73 -15.07 -16.45 -17.17 -17.33 -17.88 -18.69 -19.45 -19.67 -20.02 -20.34 -20.97 -21.26 -22.09 -22.52 -23.27 -23.60 -24.01 -24.41 -25.09 -25.64 -26.20 -26.72 -27.39 -28.40 -29.00 -29.68
Gate, drain pad: 1 wire on each pad Source pad: 1 wires on each side
Bonding Manner
Hexawave Inc.
2 Prosperity Road II, Science-Based Industrial Park, Hsinchu, Taiwan. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw All specifications are subject to change without notice.

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